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1 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary features ? fast clock and oe# access times single +3.3v +0.3v/-0.165v power supply (v dd ) separate +3.3v or +2.5v isolated output buffer supply (v dd q) snooze mode for reduced-power standby common data inputs and data outputs individual byte write control and global write three chip enables for simple depth expansion and address pipelining clock-controlled and registered addresses, data i/os and control signals internally self-timed write cycle burst control pin (interleaved or linear burst) automatic power-down 165-pin fbga package 100-pin tqfp package 119-pin bga package low capacitive bus loading x18, x32, and x36 versions available options marking* timing (access/cycle/mhz) 6.8ns/7.5ns/133 mhz -6.8 7.5ns/8.8ns/113 mhz -7.5 8.5ns/10ns/100 mhz -8.5 10ns/15ns/66 mhz -10 configurations 3.3v i/o 256k x 18 mt58l256l18f1 128k x 32 mt58l128l32f1 128k x 36 mt58l128l36f1 2.5v i/o 256k x 18 mt58l256v18f1 128k x 32 mt58l128v32f1 128k x 36 mt58l128v36f1 packages 100-pin tqfp t 165-pin fbga f 119-pin, 14mm x 22mm bga b operating temperature range commercial (0c to +70c) none industrial (-40c to +85c)** it part number example: mt58l256l18f1t-8.5 * a part marking guide for the fbga devices can be found on micron?s web site? http://www.micron.com/support/index.html . ** industrial temperature range offered in specific speed grades and configurations. contact factory for more information. mt58l256l18f1, mt58l128l32f1, mt58l128l36f1; mt58l256v18f1, mt58l128v32f1, mt58l128v36f1 3.3v v dd , 3.3v or 2.5v i/o, flow-through 4mb syncburst ? sram note: 1. jedec-standard ms-026 bha (lqfp). 2. jedec-standard ms-028 bha (pbga). 119-pin bga 2 100-pin tqfp 1 165-pin fbga (preliminary package data)
2 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary functional block diagram 256k x 18 dqs dqpa dqpb address register adv# clk binary counter and logic clr q1 q0 adsc# 18 18 16 18 ce# 18 enable register 18 2 oe# sense amps 256k x 9 x 2 memory array adsp# 9 9 output buffers input registers 9 9 18 18 2 mode ce2 ce2# gw# bwe# sa0, sa1, sa bwb# bwa# byte ? b ? write register byte ? a ? write register sa0' sa1' sa0-sa1 byte ? b ? write driver byte ? a ? write driver note: functional block diagrams illustrate simplified device operation. see truth tables, pin descriptions, and timing diagrams for detailed information. address register adv# clk binary counter and logic clr q1 q0 adsp# adsc# 17 17 15 17 ce# ce2 ce2# oe# enable register 4 sense amps output buffers input registers mode bwe# gw# bwd# bwc# bwb# bwa# byte ? d ? write register byte ? c ? write register byte ? b ? write register byte ? a ? write register byte ? a ? write driver byte ? b ? write driver byte ? c ? write driver byte ? d ? write driver sa0, sa1, sa sa0' sa1' sa0-sa1 128k x 8 x 4 (x32) 128k x 9 x 4 (x36) memory array dqs dqpa dqpd 36 36 9 9 9 9 9 9 9 9 36 36 functional block diagram 128k x 32/36
3 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary tqfp pin assignment table pin # x18 x32/x36 1 nc nc/ dqpc * 2nc dqc 3nc dqc 4v dd q 5v ss 6nc dqc 7nc dqc 8 dqb dqc 9 dqb dqc 10 v ss 11 v dd q 12 dqb dqc 13 dqb dqc 14 v ss 15 v dd 16 nc 17 v ss 18 dqb dqd 19 dqb dqd 20 v dd q 21 v ss 22 dqb dqd 23 dqb dqd 24 dqpb dqd 25 nc dqd pin # x18 x32/x36 pin # x18 x32/x36 pin # x18 x32/x36 *no connect (nc) is used on the x32 version. parity (dqpx) is used on the x36 version. **pins 43 and 42 are reserved for address expansion, 8mb and 16mb respectively. 76 v ss 77 v dd q 78 nc dqb 79 nc dqb 80 sa nc/ dqpb * 81 sa 82 sa 83 adv# 84 adsp# 85 adsc# 86 oe# 87 bwe# 88 gw# 89 clk 90 v ss 91 v dd 92 ce2# 93 bwa# 94 bwb# 95 nc bwc# 96 nc bwd# 97 ce2 98 ce# 99 sa 100 sa 26 v ss 27 v dd q 28 nc dqd 29 nc dqd 30 nc nc/ dqpd * 31 mode 32 sa 33 sa 34 sa 35 sa 36 sa1 37 sa0 38 dnu 39 dnu 40 v ss 41 v dd 42 nf** 43 nf** 44 sa 45 sa 46 sa 47 sa 48 sa 49 sa 50 sa 51 nc nc/ dqpa * 52 nc dqa 53 nc dqa 54 v dd q 55 v ss 56 nc dqa 57 nc dqa 58 dqa 59 dqa 60 v ss 61 v dd q 62 dqa 63 dqa 64 zz 65 v dd 66 nc 67 v ss 68 dqa dqb 69 dqa dqb 70 v dd q 71 v ss 72 dqa dqb 73 dqa dqb 74 dqpa dqb 75 nc dqb general description the micron ? syncburst ? sram family employs high-speed, low-power cmos designs that are fabri- cated using an advanced cmos process. micron?s 4mb syncburst srams integrate a 256k x 18, 128k x 32, or 128k x 36 sram core with advanced synchronous peripheral circuitry and a 2-bit burst counter. all synchronous inputs pass through registers con- trolled by a positive-edge-triggered single clock input (clk). the synchronous inputs include all addresses, all data inputs, active low chip enable (ce#), two addi- tional chip enables for easy depth expansion (ce2#, ce2), burst control inputs (adsc#, adsp#, adv#), byte write enables (bwx#) and global write (gw#). asynchronous inputs include the output enable (oe#), clock (clk) and snooze enable (zz). there is also a burst mode input (mode) that selects between inter- leaved and linear burst modes. the data-out (q), en- abled by oe#, is also asynchronous. write cycles can be from one to two bytes wide (x18) or from one to four bytes wide (x32/x36), as controlled by the write control inputs. burst operation can be initiated with either address status processor (adsp#) or address status controller (adsc#) inputs. subsequent burst addresses can be internally generated as controlled by the burst advance input (adv#). address and write control are registered on-chip to simplify write cycles. this allows self-timed write cycles. individual byte enables allow individual bytes to be written. during write cycles on the x18 device, bwa# controls dqa pins and dqpa; bwb# controls dqb pins and dqpb. during write cycles on the x32 and x36 devices, bwa# controls dqa pins and dqpa; bwb# controls dqb pins and dqpb; bwc# controls dqc pins and dqpc; bwd# controls dqd pins and dqpd. gw# low causes all bytes to be written. parity bits are only available on the x18 and x36 versions. micron?s 4mb syncburst srams operate from a +3.3v v dd power supply, and all inputs and outputs are ttl-compatible. users can choose either a 2.5v or 3.3v i/o version. the device is ideally suited for 486, pentium ? , and powerpc systems and those systems that benefit from a wide synchronous data bus. the device is also ideal in generic 16-, 18-, 32-, 36-, 64-, and 72-bit-wide applications. please refer to micron?s web site ( www.micron.com/ products/datasheets/syncds.html ) for the latest data sheet.
4 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary pin assignment (top view) 100-pin tqfp sa sa adv# adsp# adsc# oe# bwe# gw# clk v ss v dd ce2# bwa# bwb# nc nc ce2 ce# sa sa 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 sa nc nc v dd q v ss nc dqpa dqa dqa v ss v dd q dqa dqa v ss nc v dd zz dqa dqa v dd q v ss dqa dqa nc nc v ss v dd q nc nc nc sa sa sa sa sa sa sa nf** nf** v dd v ss dnu dnu sa0 sa1 sa sa sa sa mode nc nc nc v dd q v ss nc nc dqb dqb v ss v dd q dqb dqb v ss v dd nc v ss dqb dqb v dd q v ss dqb dqb dqpb nc v ss v dd q nc nc nc x18 sa sa adv# adsp# adsc# oe# bwe# gw# clk v ss v dd ce2# bwa# bwb# bwc# bwd# ce2 ce# sa sa 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 nc/ dqpb * dqb dqb v dd q v ss dqb dqb dqb dqb v ss v dd q dqb dqb v ss nc v dd zz dqa dqa v dd q v ss dqa dqa dqa dqa v ss v dd q dqa dqa nc/ dqpa * sa sa sa sa sa sa sa nf** nf** v dd v ss dnu dnu sa0 sa1 sa sa sa sa mode nc/ dqpc * dqc dqc v dd q v ss dqc dqc dqc dqc v ss v dd q dqc dqc v ss v dd nc v ss dqd dqd v dd q v ss dqd dqd dqd dqd v ss v dd q dqd dqd nc/ dqpd * x32/x36 *no connect (nc) is used on the x32 version. parity (dqpx) is used on the x36 version. **pins 43 and 42 are reserved for address expansion, 8mb and 16mb respectively.
5 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary tqfp pin descriptions x18 x32/x36 symbol type description 37 37 sa0 input synchronous address inputs: these inputs are registered and must 36 36 sa1 meet the setup and hold times around the rising edge of clk. 32-35, 44-50, 32-35, 44-50, sa 80-82, 99, 81, 82, 99, 100 100 93 93 bwa# input synchronous byte write enables: these active low inputs allow 94 94 bwb# individual bytes to be written and must meet the setup and hold ? 95 bwc# times around the rising edge of clk. a byte write enable is low ? 96 bwd# for a write cycle and high for a read cycle. for the x18 version, bwa# controls dqa pins and dqpa; bwb# controls dqb pins and dqpb. for the x32 and x36 versions, bwa# controls dqa pins and dqpa; bwb# controls dqb pins and dqpb; bwc# controls dqc pins and dqpc; bwd# controls dqd pins and dqpd. parity is only available on the x18 and x36 versions. 87 87 bwe# input byte write enable: this active low input permits byte write operations and must meet the setup and hold times around the rising edge of clk. 88 88 gw# input global write: this active low input allows a full 18-, 32- or 36-bit write to occur independent of the bwe# and bwx# lines and must meet the setup and hold times around the rising edge of clk. 89 89 clk input clock: this signal registers the address, data, chip enable, byte write enables and burst control inputs on its rising edge. all synchronous inputs must meet setup and hold times around the clock ? s rising edge. 98 98 ce# input synchronous chip enable: this active low input is used to enable the device and conditions the internal use of adsp#. ce# is sampled only when a new external address is loaded. 92 92 ce2# input synchronous chip enable: this active low input is used to enable the device and is sampled only when a new external address is loaded. 97 97 ce2 input synchronous chip enable: this active high input is used to enable the device and is sampled only when a new external address is loaded. 86 86 oe# input output enable: this active low, asynchronous input enables the data i/o output drivers. 83 83 adv# input synchronous address advance: this active low input is used to advance the internal burst counter, controlling burst access after the external address is loaded. a high on this pin effectively causes wait states to be generated (no address advance). to ensure use of correct address during a write cycle, adv# must be high at the rising edge of the first clock after an adsp# cycle is initiated. 84 84 adsp# input synchronous address status processor: this active low input interrupts any ongoing burst, causing a new external address to be registered. a read is performed using the new address, independent of the byte write enables and adsc#, but dependent upon ce#, ce2 and ce2#. adsp# is ignored if ce# is high. power- down state is entered if ce2 is low or ce2# is high. (continued on next page)
6 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary tqfp pin descriptions (continued) x18 x32/x36 symbol type description 85 85 adsc# input synchronous address status controller: this active low input interrupts any ongoing burst, causing a new external address to be registered. a read or write is performed using the new address if ce# is low. adsc# is also used to place the chip into power-down state when ce# is high. 31 31 mode input mode: this input selects the burst sequence. a low on this pin selects ? linear burst. ? nc or high on this pin selects ? interleaved burst. ? do not alter input state while device is operating. 64 64 zz input snooze enable: this active high, asynchronous input causes the device to enter a low-power standby mode in which all data in the memory array is retained. when zz is active, all other inputs are ignored. (a) 58, 59, (a) 52, 53, dqa input/ sram data i/os: for the x18 version, byte ? a ? is dqa pins; byte ? b ? 62, 63, 68, 69, 56-59, 62, 63 output is dqb pins. for the x32 and x36 versions, byte ? a ? is dqa pins; 72, 73 byte ? b ? is dqb pins; byte ? c ? is dqc pins; byte ? d ? is dqd pins. (b) 8, 9, 12, (b) 68, 69, dqb input data must meet setup and hold times around the rising edge 13, 18, 19, 72-75, 78, 79 of clk. 22, 23 (c) 2, 3, 6-9, dqc 12, 13 (d) 18, 19, dqd 22-25, 28, 29 74 51 nc/ dqpa nc/ no connect/parity data i/os: on the x32 version, these pins are no 24 80 nc/ dqpb i/o connect (nc). on the x18 version, byte ? a ? parity is dqpa; byte ? b ? ? 1 nc/ dqpc parity is dqpb. on the x36 version, byte ? a ? parity is dqpa; byte ? 30 nc/ dqpd ? b ? parity is dqpb; byte ? c ? parity is dqpc; byte ? d ? parity is dqpd. 15, 41, 65, 91 15, 41, 65, 91 v dd supply power supply: see dc electrical characteristics and operating conditions for range. 4, 11, 20, 27, 4, 11, 20, 27, v dd q supply isolated output buffer supply: see dc electrical characteristics and 54, 61, 70, 77 54, 61, 70, 77 operating conditions for range. 5, 10, 14, 17, 5, 10, 14, 17, v ss supply ground: gnd. 21, 26, 40, 55, 21, 26, 40, 55, 60, 67, 71, 60, 67, 71, 76, 90 76, 90 38, 39 38, 39 dnu ? do not use: these signals may either be unconnected or wired to gnd to improve package heat dissipation. 1-3, 6, 7, 16, 16, 66 nc ? no connect: these signals are not internally connected and may be 25, 28-30, connected to ground to improve package heat dissipation. 51-53, 56, 57, 66, 75, 78, 79, 95, 96 42, 43 42, 43 nf ? no function: these pins are internally connected to the die and will have the capacitance of input pins. it is allowable to leave these pins unconnected or driven by signals. reserved for address expansion, pin 43 becomes an sa at 8mb density and pin 42 becomes an sa at 16mb density.
7 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary pin layout (top view) 165-pin fbga a b c d e f g h j k l m n p r a b c d e f g h j k l m n p r 2 ce# ce2 v dd q v dd q v dd q v dd q v dd q nc v dd q v dd q v dd q v dd q v dd q sa sa sa sa nc dqb dqb dqb dqb v ss nc nc nc nc nc nc nc nc nc nc nc nc nc nc v ss dqb dqb dqb dqb dqpb nc mode (lbo#) bwb# nc v ss v dd v dd v dd v dd v dd v dd v dd v dd v dd v ss sa sa nc bwa# v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss nc tdi tms ce2# clk v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss nc sa1 sa0 bwe# gw# v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss tdo tck adsc# oe# (g#) v ss v dd v dd v dd v dd v dd v dd v dd v dd v dd v ss sa sa adv# adsp# v dd q v dd q v dd q v dd q v dd q nc v dd q v dd q v dd q v dd q v dd q sa sa sa sa nc nc nc nc nc nc dqa dqa dqa dqa nc sa sa sa nc dqpa dqa dqa dqa dqa zz nc nc nc nc nc sa sa top view 3456789 10 11 1 a b c d e f g h j k l m n p r a b c d e f g h j k l m n p r 2 ce# ce2 v dd q v dd q v dd q v dd q v dd q nc v dd q v dd q v dd q v dd q v dd q sa sa sa sa nc dqc dqc dqc dqc v ss dqd dqd dqd dqd nc nc nc nc nc nf/ dqpc dqc dqc dqc dqc v ss dqd dqd dqd dqd nf/ dqpd nc mode (lbo#) bwc# bwd# v ss v dd v dd v dd v dd v dd v dd v dd v dd v dd v ss sa sa bwb# bwa# v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss nc tdi tms ce2# clk v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss nc sa1 sa0 bwe# gw# v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss tdo tck adsc# oe# (g#) v ss v dd v dd v dd v dd v dd v dd v dd v dd v dd v ss sa sa adv# adsp# v dd q v dd q v dd q v dd q v dd q nc v dd q v dd q v dd q v dd q v dd q sa sa sa sa nc dqb dqb dqb dqb nc dqa dqa dqa dqa nc sa sa nc nc nf/ dqpb dqb dqb dqb dqb zz dqa dqa dqa dqa nf/ dqpa sa sa top view 3456789 10 11 1 x18 x32/x36 *no connect (nc) is used on the x32 version. parity (dqpx) is used on the x36 version. note: pins 11p, and 6n reserved for address pin expansion; 8mb, and 16mb respectively.
8 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary fbga pin descriptions x18 x32/x36 symbol type description 6r 6r sa0 input synchronous address inputs: these inputs are registered and must 6p 6p sa1 meet the setup and hold times around the rising edge of clk. 2a, 2b, 3p, 2a, 2b, 3p, sa 3r, 4p, 4r, 3r, 4p, 4r, 8p, 8r, 9p, 9r, 8p, 8r, 9p, 10a, 10b, 10p, 9r, 10a, 10b, 10r, 11a, 11r 10p, 10r, 11r 5b 5b bwa# input synchronous byte write enables: these active low inputs allow 4a 5a bwb# individual bytes to be written and must meet the setup and hold ? 4a bwc# times around the rising edge of clk. a byte write enable is low ? 4b bwd# for a write cycle and high for a read cycle. for the x18 version, bwa# controls dqas and dqpa; bwb# controls dqbs and dqpb. for the x32 and x36 versions, bwa# controls dqas and dqpa; bwb# controls dqbs and dqpb; bwc# controls dqcs and dqpc; bwd# controls dqds and dqpd. parity is only available on the x18 and x36 versions. 7a 7a bwe# input byte write enable: this active low input permits byte write operations and must meet the setup and hold times around the rising edge of clk. 7b 7b gw# input global write: this active low input allows a full 18-, 32-, or 36-bit write to occur independent of the bwe# and bwx# lines and must meet the setup and hold times around the rising edge of clk. 6b 6b clk input clock: this signal registers the address, data, chip enable, byte write enables, and burst control inputs on its rising edge. all synchronous inputs must meet setup and hold times around the clock ? s rising edge. 3a 3a ce# input synchronous chip enable: this active low input is used to enable the device and conditions the internal use of adsp#. ce# is sampled only when a new external address is loaded. 6a 6a ce2# i nput synchronous chip enable: this active low input is used to enable the device and is sampled only when a new external address is loaded. 11h 11h zz input snooze enable: this active high, asynchronous input causes the device to enter a low-power standby mode in which all data in the memory array is retained. when zz is active, all other inputs are ignored. 3b 3b ce2 input synchronous chip enable: this active high input is used to enable the device and is sampled only when a new external address is loaded. 8b 8b oe#(g#) i nput output enable: this active low, asynchronous input enables the data i/o output drivers. 9a 9a adv# input synchronous address advance: this active low input is used to advance the internal burst counter, controlling burst access after the external address is loaded. a high on adv# effectively causes wait states to be generated (no address advance). to ensure use of correct address during a write cycle, adv# must be high at the rising edge of the first clock after an adsp# cycle is initiated. (continued on next page)
9 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary fbga pin descriptions (continued) x18 x32/x36 symbol type description 9b 9b adsp# input synchronous address status processor: this active low input interrupts any ongoing burst, causing a new external address to be registered. a read is performed using the new address, independent of the byte write enables and adsc#, but dependent upon ce#, ce2 and ce2#. adsp# is ignored if ce# is high. power- down state is entered if ce2 is low or ce2# is high. 8a 8a adsc# input synchronous address status controller: this active low input interrupts any ongoing burst, causing a new external address to be registered. a read or write is performed using the new address if ce# is low. adsc# is also used to place the chip into power-down state when ce# is high. 1r 1r mode input mode: this input selects the burst sequence. a low on this input (lb0#) selects ? linear burst. ? nc or high on this input selects ? interleaved burst. ? do not alter input state while device is operating. (a) 10j, 10k, (a) 10j, 10k, dqa input/ sram data i/os: for the x18 version, byte ? a ? is associated dqas; 10l, 10m, 11d, 10l, 10m, 11j, output byte ? b ? is associated with dqbs. for the x32 and x36 versions, 11e, 11f, 11g 11k, 11l, 11m byte ? a ? is associated with dqas; byte ? b ? is associated with dqbs; (b) 1j, 1k, (b) 10d, 10e, dqb byte ? c ? is associated with dqcs; byte ? d ? is associated with dqds. 1l, 1m, 2d, 10f, 10g, 11d, input data must meet setup and hold times around the rising edge 2e, 2f, 2g 11e, 11f, 11g of clk. (c) 1d, 1e, dqc 1f, 1g, 2d, 2e, 2f, 2g (d) 1j, 1k, 1l, dqd 1m, 2j, 2k, 2l, 2m 11c 11n nc/ dqpa nc/ no connect/parity data i/os: on the x32 version, these are no 1n 11c nc/ dqpb i/o connect (nc). on the x18 version, byte ? a ? parity is dqpa; byte ? b ? ? 1c nc/ dqpc parity is dqpb. on the x36 version, byte ? a ? parity is dqpa; byte ? 1n nc/ dqpd ? b ? parity is dqpb; byte ? c ? parity is dqpc; byte ? d ? parity is dqpd. 4d, 4e, 4f, 4d, 4e, 4f, v dd supply power supply: see dc electrical characteristics and operating 4g, 4h, 4j, 4g, 4h, 4j, conditions for range. 4k, 4l, 4m, 4k, 4l, 4m, 8d, 8e, 8f, 8d, 8e, 8f, 8g, 8h, 8j, 8g, 8h, 8j, 8k, 8l, 8m 8k, 8l, 8m 3c, 3d, 3e, 3c, 3d, 3e, v dd q supply isolated output buffer supply: see dc electrical characteristics and 3f, 3g, 3j, 3f, 3g, 3j, operating conditions for range. 3k, 3l, 3m, 3k, 3l, 3m, 3n, 9c, 9d, 3n, 9c, 9d, 9e, 9f, 9g, 9e, 9f, 9g, 9j, 9k, 9l, 9j, 9k, 9l, 9m, 9n 9m, 9n (continued on next page)
10 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary fbga pin descriptions (continued) x18 x32/x36 symbol type description 1h, 2h, 4c, 4n, 1h, 2h, 4c, 4n, v ss supply ground: gnd. 5c, 5d, 5e 5f, 5c, 5d, 5e 5f, 5g, 5h, 5j, 5k, 5g, 5h, 5j, 5k, 5l, 5m, 6c, 6d, 5l, 5m, 6c, 6d, 6e, 6f, 6g, 6h, 6e, 6f, 6g, 6h, 6j, 6k, 6l, 6m, 6j, 6k, 6l, 6m, 7c, 7d, 7e, 7f, 7c, 7d, 7e, 7f, 7g, 7h, 7j, 7g, 7h, 7j, 7k, 7l, 7m, 7k, 7j, 7m, 7n, 8c, 8n 7n, 8c, 8n 5p, 5r, 7p, 7r 5p, 5r, 7p, 7r dnu ? do not use: these signals may either be unconnected or wired to gnd to improve package heat dissipation. 1a, 1b, 1c, 1a, 1b, 1p, nc ? no connect: these signals are not internally connected and may 1d, 1e, 1f, 2c, 2n, be connected to ground to improve package heat dissipation. 1g, 1p, 2c, 2p, 2r, 3h, pins 11p, and 6n reserved for address pin expansion; 8mb, and 2j, 2k, 5n, 6n, 16mb respectively. 2l, 2m, 2n, 9h, 10c, 2p, 2r, 3h, 10h, 10n, 4b, 5a, 5n, 11a, 11b, 6n, 9h, 10c, 11p 10d, 10e, 10f, 10g, 10h, 10n, 11b, 11j, 11k, 11l, 11m, 11n, 11p,
11 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary pin layout (top view) 119-pin bga x18 x32/x36 *no connect (nc) is used on the x32 version. parity (dqpx) is used on the x36 version. note: pins 6b and 2b reserved for address pin expansion; 8mb and 16mb respectively. a b c d e f g h j k l m n p r t u 1 v dd q nc nc dqc dqc v dd q dqc dqc v dd q dqd dqd v dd q dqd dqd nc nc v dd q sa ce2** sa nf/ dqpc * dqc dqc dqc dqc v dd dqd dqd dqd dqd nf/ dqpd * sa nc tms sa sa sa v ss v ss v ss bwc# v ss nc v ss bwd# v ss v ss v ss mode (lbo#) sa tdi adsp# adsc# v dd nc ce# oe# adv# gw# v dd clk nc bwe# sa1 sa0 v dd sa tck sa sa sa v ss v ss v ss bwb# v ss nc v ss bwa# v ss v ss v ss v dd 3 sa tco sa sa sa nf/ dqpb * dqb dqb dqb dqb v dd dqa dqa dqa dqa nf/ dqpa * sa nc nc v dd q nc nc dqb dqb v dd q dqb dqb v dd q dqa dqa v dd q dqa dqa nc zz v dd q top view 234567 a b c d e f g h j k l m n p r t u 1 v dd q nc nc dqb nc v dd q nc dqb v dd q nc dqb v dd q dqb nc nc nc v dd q sa ce2** sa nc dqb nc dqb nc v dd dqb nc dqb nc dqpb sa sa tms sa sa sa v ss v ss v ss bwb# v ss nc v ss v ss v ss v ss v ss mode (lbo#) sa tdi adsp# adsc# v dd nc ce# oe# adv# gw# v dd clk nc bwe# sa1 sa0 v dd nc tck sa sa sa v ss v ss v ss v ss v ss nc v ss bwa# v ss v ss v ss v dd 3 sa tdo sa sa sa dqpa nc dqa nc dqa v dd nc dqa nc dqa nc sa sa nc v dd q nc nc nc dqa v dd q dqa nc v dd q dqa nc v dd q nc dqa nc zz v dd q top view 234567
12 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary bga pin descriptions x18 x32/x36 symbol type description 4p 4p sa0 input synchronous address inputs: these inputs are registered and 4n 4n sa1 must meet the setup and hold times around the rising edge 2a, 3a, 5a, 2a, 2c, 2r, s a of clk. 6a, 3b, 5b, 3a, 3b, 3c, 2c, 3c, 5c, 3t, 4t, 5a, 6c, 2r, 6r, 5b, 5c, 5t, 2t, 3t, 5t, 6t 6a, 6c, 6r 5l 5l bwa# input synchronous byte write enables: these active low inputs allow 3g 5g bwb# individual bytes to be written and must meet the setup and hold ? 3g bwc# times around the rising edge of clk. a byte write enable is low ? 3l bwd# for a write cycle and high for a read cycle. for the x18 version, bwa# controls dqa ? s and dqpa; bwb# controls dqb ? s and dqpb. for the x32 and x36 versions, bwa# controls dqa ? s and dqpa; bwb# controls dqb ? s and dqpb; bwc# controls dqc ? s and dqpc; bwd# controls dqd ? s and dqpd. parity is only available on the x18 and x36 versions. 4m 4m bwe# input byte write enable: this active low input permits byte write operations and must meet the setup and hold times around the rising edge of clk. 4h 4h gw# input global write: this active low input allows a full 18-, 32- or 36-bit write to occur independent of the bwe# and bwx# lines and must meet the setup and hold times around the rising edge of clk. 4k 4k clk input clock: this signal registers the address, data, chip enable, byte write enables and burst control inputs on its rising edge. all synchronous inputs must meet setup and hold times around the clock ? s rising edge. 4e 4e ce# input synchronous chip enable: this active low input is used to enable the device and conditions the internal use of adsp#. ce# is sampled only when a new external address is loaded. 6 b 6 b ce2# input synchronous chip enable: this active low input is used to enable the device and is sampled only when a new external address is loaded. 7t 7t zz input snooze enable: this active high, asynchronous input causes the device to enter a low-power standby mode in which all data in the memory array is retained. when zz is active, all other inputs are ignored. 2b 2b ce2 input synchronous chip enable: this active high input is used to enable the device and is sampled only when a new external address is loaded. 4f 4f oe# input output enable: this active low, asynchronous input enables the data i/o output drivers. 4g 4g adv# input synchronous address advance: this active low input is used to advance the internal burst counter, controlling burst access after the external address is loaded. a high on adv# effectively causes wait states to be generated (no address advance). to ensure use of correct address during a write cycle, adv# must be high at the rising edge of the first clock after an adsp# cycle is initiated. (continued on next page)
13 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary bga pin descriptions (continued) x18 x32/x36 symbol type description 4a 4a adsp# input synchronous address status processor: this active low input interrupts any ongoing burst, causing a new external address to be registered. a read is performed using the new address, independent of the byte write enables and adsc#, but dependent upon ce#, ce2 and ce2#. adsp# is ignored if ce# is high. power-down state is entered if ce2 is low or ce2# is high. 4b 4b adsc# input synchronous address status controller: this active low input interrupts any ongoing burst, causing a new external address to be registered. a read or write is performed using the new address if ce# is low. adsc# is also used to place the chip into power-down state when ce# is high. 3r 3r mode input mode: this input selects the burst sequence. a low on this input selects ? linear burst. ? nc or high on this input selects ? interleaved burst. ? do not alter input state while device is operating. (a) 6f, 6h, 6l, (a) 6k, 6l, dqa input/ sram data i/os: for the x18 version, byte ? a ? is dqa ? s; byte ? b ? 6n, 7e, 7g, 6m, 6n, 7k, output is dqb ? s. for the x32 and x36 versions, byte ? a ? is dqa ? s; 7k, 7p 7l, 7n, 7p byte ? b ? is dqb ? s; byte ? c ? is dqc ? s; byte ? d ? is dqd ? s. input (b) 1d, 1h, (b) 6e, 6f, d q b data must meet setup and hold times around the rising edge of 1l, 1n, 2e, 6g, 6h, 7d, clk. 2g, 2k, 2m 7e, 7g, 7h (c) 1d, 1e, dqc 1g, 1h, 2e, 2f, 2g, 2h (d) 1k, 1l, dqd 1n, 1p, 2k, 2l, 2m, 2n 6d 6p nc/ dqpa nc/ no connect/parity data i/os: on the x32 version, these are no 2p 6d nc/ dqpb i/o connect (nc). on the x18 version, byte ? a ? parity is dqpa; byte ? 2d nc/ dqpc ? b ? parity is dqpb. on the x36 version, byte ? a ? parity is dqpa; ? 2p nc/ dqpd byte ? b ? parity is dqpb; byte ? c ? parity is dqpc; byte ? d ? parity is dqpd. 2j, 4c, 4j, 2j, 4c, 4j, v dd supply power supply: see dc electrical characteristics and operating 4r, 5r, 6j 4r, 5r, 6j conditions for range. 1a, 1f, 1j, 1a, 1f, 1j, v dd q supply isolated output buffer supply: see dc electrical characteristics and 1m, 1u, 7a, 1m, 1u, 7a, operating conditions for range. 7f, 7j, 7m, 7f, 7j, 7m, 7u 7u 3d, 3e, 3f, 3d, 3e, 3f, v ss supply ground: gnd. 3h, 3k, 3l, 3h, 3k, 3m, 3m, 3n, 3p, 3n, 3p, 5d, 5d, 5e, 5f, 5e, 5f, 5h, 5g, 5h, 5k, 5k, 5m, 5n, 5m, 5n, 5p 5p (continued on next page)
14 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary x18 x32/x36 symbol type description 2u, 3u, 4u, 2u, 3u, 4u, dnu ? do not use: these signals may either be unconnected or wired 5u 5u to gnd to improve package heat dissipation. 1b, 1c, 1e, 1b, 1c, 1r, n c ? no connect: these signals are not internally connected and 1g, 1k, 1p, 1t, 2t, 3j, may be connected to ground to improve package heat 1r, 1t, 2d, 4d, 4l, 5j, dissipation. 2f, 2h, 2l, 6t, 6u, 7b, 2n, 3j, 4d, 7c, 7r 4l, 4t, 5j, 6e, 6g, 6k, 6m, 6p, 6u, 7b, 7c, 7d, 7h, 7l, 7n, 7r bga pin descriptions (continued)
15 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary interleaved burst address table (mode = nc or high) first address (external) second address (internal) third address (internal) fourth address (internal) x...x00 x...x01 x...x10 x...x11 x...x01 x...x00 x...x11 x...x10 x...x10 x...x11 x...x00 x...x01 x...x11 x...x10 x...x01 x...x00 linear burst address table (mode = low) first address (external) second address (internal) third address (internal) fourth address (internal) x...x00 x...x01 x...x10 x...x11 x...x01 x...x10 x...x11 x...x00 x...x10 x...x11 x...x00 x...x01 x...x11 x...x00 x...x01 x...x10 partial truth table for write commands (x18) function gw# bwe# bwa# bwb# read h h x x read h l h h write byte ? a ? hl lh write byte ? b ? hlhl write all bytes h l l l write all bytes l x x x partial truth table for write commands (x32/x36) function gw# bwe# bwa# bwb# bwc# bwd# read h h x x x x read h l h h h h write byte ? a ? hl lhhh write all bytes h lllll write all bytes l x x x x x note: using bwe# and bwa# through bwd#, any one or more bytes may be written.
16 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary truth table operation address used ce# ce2# ce2 zz adsp# adsc# adv# write# oe# clk dq deselect cycle, power-down none h x x l x l x x x l-h high-z deselect cycle, power-down none l x l l l x x x x l-h high-z deselect cycle, power-down none l h x l l x x x x l-h high-z deselect cycle, power-down none l x l l h l x x x l-h high-z deselect cycle, power-down none l h x l h l x x x l-h high-z snooze mode, power-down none x x x h xxxxx x high-z read cycle, begin burst external l l h l l x x x l l-h q read cycle, begin burst external l l h l l x x x h l-h high-z write cycle, begin burst external l l h l h l x l x l-h d read cycle, begin burst external l l h l h l x h l l-h q read cycle, begin burst external l l h l h l x h h l-h high-z read cycle, continue burst next x x x l h h l h l l-h q read cycle, continue burst next x x x l h h l h h l-h high-z read cycle, continue burst next h x x l x h l h l l-h q read cycle, continue burst next h x x l x h l h h l-h high-z write cycle, continue burst next x x x l h h l l x l-h d write cycle, continue burst next h x x l x h l l x l-h d read cycle, suspend burst current x x x l hhhhll-hq read cycle, suspend burst current x x x l hhhhhl-h high-z read cycle, suspend burst current h x x l x h h h l l-h q read cycle, suspend burst current h x x l x h h h h l-h high-z write cycle, suspend burst current x x x l h h h l x l-h d write cycle, suspend burst current h x x l x h h l x l-h d note: 1. x means ? don ? t care. ? # means active low. h means logic high. l means logic low. 2. for write#, l means any one or more byte write enable signals (bwa#, bwb#, bwc# or bwd#) and bwe# are low or gw# is low. write# = h for all bwx#, bwe#, gw# high. 3. bwa# enables writes to dqas and dqpa. bwb# enables writes to dqbs and dqpb. bwc# enables writes to dqcs and dqpc. bwd# enables writes to dqds and dqpd. dqpa and dqpb are only available on the x18 and x36 versions. dqpc and dqpd are only available on the x36 version. 4. all inputs except oe# and zz must meet setup and hold times around the rising edge (low to high) of clk. 5. wait states are inserted by suspending burst. 6. for a write operation following a read operation, oe# must be high before the input data setup time and held high throughout the input data hold time. 7. this device contains circuitry that will ensure the outputs will be in high-z during power-up. 8. adsp# low always initiates an internal read at the l-h edge of clk. a write is performed by setting one or more byte write enable signals and bwe# low or gw# low for the subsequent l-h edge of clk. refer to write timing diagram for clarification.
17 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary 3.3v i/o dc electrical characteristics and operating conditions (0 c t a +70 c; v dd , v dd q = +3.3v +0.3v/-0.165v unless otherwise noted) description conditions symbol min max units notes input high (logic 1) voltage v ih 2.0 v dd + 0.3 v 1, 2 input low (logic 0) voltage v il -0.3 0.8 v 1, 2 input leakage current 0v v in v dd il i -1.0 1.0 a 3 output leakage current output(s) disabled, il o -1.0 1.0 a 0v v in v dd output high voltage i oh = -4.0ma v oh 2.4 ? v 1, 4 output low voltage i ol = 8.0ma v ol ? 0.4 v 1, 4 supply voltage v dd 3.135 3.6 v 1 isolated output buffer supply v dd q 3.135 3.6 v 1, 5 absolute maximum ratings* voltage on v dd supply relative to v ss ............................... -0.5v to +4.6v voltage on v dd q supply relative to v ss ............................... -0.5v to +4.6v v in -0.5v to v dd q + 0.5v storage temperature (plastic) ............ -55c to +150c junction temperature** ................................... +150c short circuit output current ........................... 100ma *stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. **maximum junction temperature depends upon pack- age type, cycle time, loading, ambient temperature and airflow. see micron technical note tn-05-14 for more information. note: 1. all voltages referenced to v ss (gnd). 2. overshoot: v ih +4.6v for t t kc/2 for i 20ma undershoot: v il -0.7v for t t kc/2 for i 20ma power-up: v ih +3.6v and v dd 3.135v for t 200ms 3. mode pin has an internal pull-up, and input leakage = 10a. 4. the load used for v oh , v ol testing is shown in figure 2 for 3.3v i/o. ac load current is higher than the stated dc values. ac i/o curves are available upon request. 5. v dd q should never exceed v dd . v dd and v dd q can be connected together, for 3.3v i/o operation only.
18 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary note: 1. this parameter is sampled. 2. preliminary package data. tqfp capacitance description conditions symbol typ max units notes control input capacitance t a = 25 c; f = 1 mhz; c i 34pf1 input/output capacitance (dq) v dd = 3.3v c o 45pf1 address capacitance c a 3 3.5 p f 1 clock capacitance c ck 3 3.5 p f 1 fbga capacitance description conditions symbol typ max units notes address/control input capacitance c i 2.5 3.5 p f 1, 2 output capacitance (q) t a = 25 c; f = 1 mhz c o 4 5 p f 1, 2 clock capacitance c ck 2.5 3.5 p f 1, 2 bga capacitance description conditions symbol typ max units notes address/control input capacitance t a = 25 c; f = 1 mhz c i 47pf1 input/output capacitance (dq) v dd = 3.3v c o 4.5 5.5 p f 1 address capacitance c a 47pf1 clock capacitance c ck 4 5.5 p f 1
19 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary 2.5v i/o dc electrical characteristics and operating conditions (0 c t a +70 c; v dd = +3.3v +0.3v/-0.165v; v dd q = +2.5v +0.4v/-0.125v unless otherwise noted) description conditions symbol min max units notes input high (logic 1) voltage data bus (dqx) v ih q 1.7 v dd q + 0.3 v 1, 2 inputs v ih 1.7 v dd + 0.3 v 1, 2 input low (logic 0) voltage v il -0.3 0.7 v 1, 2 input leakage current 0v v in v dd il i -1.0 1.0 a 3 output leakage current output(s) disabled, il o -1.0 1.0 a 0v v in v dd q (dqx) output high voltage i oh = -2.0ma v oh 1.7 ? v 1, 4 i oh = -1.0ma v oh 2.0 ? v 1, 4 output low voltage i ol = 2.0ma v ol ? 0.7 v 1, 4 i ol = 1.0ma v ol ? 0.4 v 1, 4 supply voltage v dd 3.135 3.6 v 1 isolated output buffer supply v dd q 2.375 2.9 v 1 note: 1. all voltages referenced to v ss (gnd). 2. overshoot: v ih +4.6v for t t kc/2 for i 20ma undershoot: v il -0.7v for t t kc/2 for i 20ma power-up: v ih +3.6v and v dd 3.135v for t 200ms 3. mode has an internal pull-up, and input leakage = 10a. 4. the load used for v oh , v ol testing is shown in figure 4 for 2.5v i/o. ac load current is higher than the shown dc values. ac i/o curves are available upon request.
20 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary note: 1. this parameter is sampled. 2. preliminary package data. tqfp thermal resistance description conditions symbol typ units notes thermal resistance test conditions follow standard test methods ja 46 c/w 1 (junction to ambient) and procedures for measuring thermal thermal resistance impedance, per eia/jesd51. jc 2.8 c/w 1 (junction to top of case) fbga thermal resistance description conditions symbol typ units notes junction to ambient test conditions follow standard test methods ja 40 c/w 1, 2 (airflow of 1m/s) and procedures for measuring thermal junction to case (top) impedance, per eia/jesd51. jc 9 c/w 1, 2 junction to pins jb 17 c/w 1, 2 (bottom) bga thermal resistance description conditions symbol typ units notes junction to ambient test conditions follow standard test methods ja 40 c/w 1 (airflow of 1m/s) and procedures for measuring thermal junction to case (top) impedance, per eia/jesd51. jc 9 c/w 1 junction to bumps jb 17 c/w 1 (bottom)
21 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary max note: 1. v dd q = +3.3v +0.3v/-0.165v for 3.3v i/o configuration; v dd q = +2.5v +0.4v/-0.125v for 2.5v i/o configuration. 2. i dd is specified with no output current and increases with faster cycle times. i dd q increases with faster cycle times and greater output loading. 3. ? device deselected ? means device is in power-down mode as defined in the truth table. ? device selected ? means device is active (not in power-down mode). 4. typical values are measured at 3.3v, 25 c, and 15ns cycle time. i dd operating conditions and maximum limits (note 1) (0 c t a +70 c; v dd = +3.3v +0.3v/-0.165v unless otherwise noted) description conditions symbol typ -6.8 -7.5 -8.5 -10 units notes power supply device selected; all inputs v il current: or v ih ; cycle time t kc (min); i dd 155 425 375 325 250 m a 2, 3, 4 operating v dd = max; outputs open power supply d evice selected; v dd = max; adsc#, current: idle adsp#, adv#, gw#, bwx# v ih ;i dd 1 35 115 100 85 65 m a 2, 3, 4 all inputs v ss + 0.2 or v dd q - 0.2; cycle time t kc (min); outputs open cmos standby device deselected; v dd = max; all inputs v ss + 0.2 or v dd q - 0.2; i sb 2 0.4 10 10 10 10 ma 3, 4 all inputs static; clk frequency = 0 ttl standby device deselected; v dd = max; all inputs v il or v ih ;i sb 3 8 25252525 ma 3, 4 all inputs static; clk frequency = 0 clock running device deselected; v dd = max; adsp#, adv#, gw#, bwx# v ih ;i sb 4 35 115 100 85 65 m a 3, 4 all inputs v ss + 0.2 or v dd q - 0.2; cycle time t kc (min)
22 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary note: 1. test conditions as specified with the output loading shown in figure 1 for 3.3v i/o (v dd q = +3.3v +0.3v/-0.165v) and figure 3 for 2.5v i/o (v dd q = +2.5v +0.4v/-0.125v) unless otherwise noted. 2. measured as high above v ih and low below v il . 3. this parameter is measured with the output loading shown in figure 2 for 3.3v i/o and figure 4 for 2.5v i/o. 4. this parameter is sampled. 5. transition is measured 500mv from steady state voltage. 6. refer to technical note tn-58-09, ? synchronous sram bus contention design considerations, ? for a more thorough discussion on these parameters. 7. oe# is a ? don ? t care ? when a byte write enable is sampled low. 8. a read cycle is defined by byte write enables all high or adsp# low for the required setup and hold times. a write cycle is defined by at least one byte write enable low and adsp# high for the required setup and hold times. 9. this is a synchronous device. all addresses must meet the specified setup and hold times for all rising edges of clk when either adsp# or adsc# is low and chip enabled. all other synchronous inputs must meet the setup and hold times with stable logic levels for all rising edges of clock (clk) when the chip is enabled. chip enable must be valid at each rising edge of clk when either adsp# or adsc# is low to remain enabled. electrical characteristics and recommended ac operating conditions (note 1) (0 c t a +70 c; v dd = +3.3v +0.3v/-0.165v unless otherwise noted) -6.8 -7.5 -8.5 -10 description symbol min max min max min max min max units notes clock clock cycle time t kc 7.5 8.8 10 15 ns clock frequency f kf 133 113 100 66 mhz clock high time t kh 2.5 2.5 3.0 4.0 ns 2 clock low time t kl 2.5 2.5 3.0 4.0 ns 2 output times clock to output valid t kq 6.8 7.5 8.5 10 ns clock to output invalid t kqx 1.5 1.5 3.0 3.0 ns 3 clock to output in low-z t kqlz 1.5 1.5 3.0 3.0 ns 3, 4, 5, 6 clock to output in high-z t kqhz 3.5 4.2 5.0 5.0 ns 3, 4, 5, 6 oe# to output valid t oeq 3.5 4.2 5.0 5.0 ns 7 oe# to output in low-z t oelz 0 0 0 0 ns 3, 4, 5, 6 oe# to output in high-z t oehz 3.5 4.2 5.0 5.0 ns 3, 4, 5, 6 setup times address t as 1.5 1.5 1.8 2.0 ns 8, 9 address status (adsc#, adsp#) t adss 1.5 1.5 1.8 2.0 ns 8, 9 address advance (adv#) t aas 1.5 1.5 1.8 2.0 ns 8, 9 byte write enables t ws 1.5 1.5 1.8 2.0 ns 8, 9 (bwa#-bwd#, gw#, bwe#) data-in t ds 1.5 1.5 1.8 2.0 ns 8, 9 chip enable (ce#) t ces 1.5 1.5 1.8 2.0 ns 8, 9 hold times address t ah 0.5 0.5 0.5 0.5 ns 8, 9 address status (adsc#, adsp#) t adsh 0.5 0.5 0.5 0.5 ns 8, 9 address advance (adv#) t aah 0.5 0.5 0.5 0.5 ns 8, 9 byte write enables t wh 0.5 0.5 0.5 0.5 ns 8, 9 (bwa#-bwd#, gw#, bwe#) data-in t dh 0.5 0.5 0.5 0.5 ns 8, 9 chip enable (ce#) t ceh 0.5 0.5 0.5 0.5 ns 8, 9
23 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary figure 1 q 50 v = 1.5v z = 50 o t q 351 317 5pf +3.3v figure 2 3.3v i/o ac test conditions input pulse levels ................. v ih = (v dd /2.2) + 1.5v .................... v il = (v dd /2.2) - 1.5v input rise and fall times ..................................... 1ns input timing reference levels ..................... v dd /2.2 output reference levels ............................ v dd q/2.2 output load ............................. see figures 1 and 2 load derating curves micron 256k x 18, 128k x 32, and 128k x 36 syncburst sram timing is dependent upon the capaci- tive loading on the outputs. consult the factory for copies of i/o current versus voltage curves. q 50 ? v = 1.25v z = 50 ? o t figure 3 q 225 ? 225 ? 5pf +2.5v figure 4 2.5v i/o ac test conditions input pulse levels ............. v ih = (v dd /2.64) + 1.25v ................ v il = (v dd /2.64) - 1.25v input rise and fall times ..................................... 1ns input timing reference levels ................... v dd /2.64 output reference levels ............................... v dd q/2 output load ............................. see figures 3 and 4 3.3v i/o output load equivalents 2.5v i/o output load equivalents
24 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary snooze mode snooze mode is a low-current, ?power-down? mode in which the device is deselected and current is reduced to i sb 2 z . the duration of snooze mode is dictated by the length of time zz is in a high state. after the device enters snooze mode, all inputs except zz become gated inputs and are ignored. zz is an asynchronous, active high input that causes the device to enter snooze mode. when zz becomes a logic high, i sb 2 z is guaranteed after the setup time t zz is met. any read or write operation pending when the device enters snooze mode is not guaranteed to complete successfully. therefore, snooze mode must not be initiated until valid pending opera- tions are completed. snooze mode electrical characteristics description conditions symbol min max units notes current during snooze mode zz v ih i sb 2z 10 ma zz active to input ignored t zz t kc ns 1 zz inactive to input sampled t rzz t kc ns 1 zz active to snooze current t zzi t kc ns 1 zz inactive to exit snooze current t rzzi 0 ns 1 note: 1. this parameter is sampled. snooze mode waveform t zz i supply clk zz t rzz all inputs (except zz) don ? t care i isb2z t zzi t rzzi outputs (q) high-z deselect or read only
25 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary read timing 3 t kc t kl clk adsp# t adsh t adss address t kh oe# adsc# ce# (note 2) t ah t as a1 t ceh t ces q high-z t kqlz t kqx t kq adv# t oehz t kq single read burst read t oeq t oelz t kqhz burst wraps around to its initial state. t aah t aas t wh t ws t adsh t adss q(a2) q(a2 + 1) q(a2 + 2) q(a1) q(a2) q(a2 + 1) q(a2 + 2) q(a2 + 3) a2 (note 1) adv# suspends burst. deselect cycle (note 4) bwe#, gw#, bwa#-bwd# don ? t care undefined note: 1. q(a2) refers to output from address a2. q(a2 + 1) refers to output from the next internal burst address following a2. 2. ce2# and ce2 have timing identical to ce#. on this diagram, when ce# is low, ce2# is low and ce2 is high. when ce# is high, ce2# is high and ce2 is low. 3. timing is shown assuming that the device was not enabled before entering into this sequence. 4. outputs are disabled t kqhz after deselect. -6.8 -7.5 -8.5 -10 symbol min max min max min max min max units t as 1.5 1.5 1.8 2.0 ns t adss 1.5 1.5 1.8 2.0 ns t aas 1.5 1.5 1.8 2.0 ns t ws 1.5 1.5 1.8 2.0 ns t ces 1.5 1.5 1.8 2.0 ns t ah 0.5 0.5 0.5 0.5 ns t adsh 0.5 0.5 0.5 0.5 ns t aah 0.5 0.5 0.5 0.5 ns t wh 0.5 0.5 0.5 0.5 ns t ceh 0.5 0.5 0.5 0.5 ns read timing parameters -6.8 -7.5 -8.5 -10 symbol min max min max min max min max units t kc 7.5 8.8 10 15 ns f kf 133 113 100 66 mhz t kh 2.5 2.5 3.0 4.0 ns t kl 2.5 2.5 3.0 4.0 ns t kq 6.8 7.5 8.5 10 ns t kqx 1.5 1.5 3.0 3.0 ns t kqlz 1.5 1.5 3.0 3.0 ns t kqhz 3.5 4.2 5.0 5.0 ns t oeq 3.5 4.2 5.0 5.0 ns t oelz 0000 ns t oehz 3.5 4.2 5.0 5.0 ns
26 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary write timing note: 1. d(a2) refers to output from address a2. d(a2 + 1) refers to output from the next internal burst address following a2. 2. ce2# and ce2 have timing identical to ce#. on this diagram, when ce# is low, ce2# is low and ce2 is high. when ce# is high, ce2# is high and ce2 is low. 3. oe# must be high before the input data setup and held high throughout the data hold time. this prevents input/ output data contention for the time period prior to the byte write enable inputs being sampled. 4. adv# must be high to permit a write to the loaded address. 5. full-width write can be initiated by gw# low; or gw# high and bwe#, bwa# and bwb# low for x18 device; or gw# high and bwe#, bwa#-bwd# low for x32 and x36 devices. t kc t kl clk adsp# t adsh t adss address t kh oe# adsc# ce# (note 2) t ah t as a1 t ceh t ces q high-z adv# burst read burst write d(a2) d(a2 + 1) d(a2 + 1) d(a1) d(a3) d(a3 + 1) d(a3 + 2) d(a2 + 3) a2 a3 d extended burst write d(a2 + 2) single write t adsh t adss t adsh t adss t oehz t aah t aas t wh t ws t dh t ds (note 3) (note 1) (note 4) gw# t wh t ws (note 5) byte write signals are ignored when adsp# is low. adsc# extends burst. adv# suspends burst. bwe#, bwa#-bwd# don ? t care -6.8 -7.5 -8.5 -10 symbol min max min max min max min max units t ds 1.5 1.5 1.8 2.0 ns t ces 1.5 1.5 1.8 2.0 ns t ah 0.5 0.5 0.5 0.5 ns t adsh 0.5 0.5 0.5 0.5 ns t aah 0.5 0.5 0.5 0.5 ns t wh 0.5 0.5 0.5 0.5 ns t dh 0.5 0.5 0.5 0.5 ns t ceh 0.5 0.5 0.5 0.5 ns write timing parameters -6.8 -7.5 -8.5 -10 symbol min max min max min max min max units t kc 7.5 8.8 10 15 ns f kf 133 113 100 66 mhz t kh 2.5 2.5 3.0 4.0 ns t kl 2.5 2.5 3.0 4.0 ns t oehz 3.5 4.2 5.0 5.0 ns t as 1.5 1.5 1.8 2.0 ns t adss 1.5 1.5 1.8 2.0 ns t aas 1.5 1.5 1.8 2.0 ns t ws 1.5 1.5 1.8 2.0 ns
27 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary read/write timing 6 t kc t kl clk adsp# t adsh t adss address t kh oe# adsc# ce# (note 2) t ah t as a2 t ceh t ces q adv# single write d(a3) a3 a4 d burst read back-to-back reads (note 5) high-z q(a2) q(a4) q(a4+1) q(a4+2) q(a4+3) t wh t ws t oehz t dh t ds t kq t oelz (note 1) a1 a5 a6 d(a5) d(a6) q(a1) back-to-back writes bwe#, bwa#-bwd# (note 4) don ? t care undefined note: 1. q(a4) refers to output from address a4. q(a4 + 1) refers to output from the next internal burst address following a4. 2. ce2# and ce2 have timing identical to ce#. on this diagram, when ce# is low, ce2# is low and ce2 is high. when ce# is high, ce2# is high and ce2 is low. 3. the data bus (q) remains in high-z following a write cycle unless an adsp#, adsc# or adv# cycle is performed. 4. gw# is high. 5. back-to-back reads may be controlled by either adsp# or adsc#. 6. timing is shown assuming that the device was not enabled before entering into this sequence. -6.8 -7.5 -8.5 -10 symbol min max min max min max min max units t ws 1.5 1.5 1.8 2.0 ns t ds 1.5 1.5 1.8 2.0 ns t ces 1.5 1.5 1.8 2.0 ns t ah 0.5 0.5 0.5 0.5 ns t adsh 0.5 0.5 0.5 0.5 ns t wh 0.5 0.5 0.5 0.5 ns t dh 0.5 0.5 0.5 0.5 ns t ceh 0.5 0.5 0.5 0.5 ns read/write timing parameters -6.8 -7.5 -8.5 -10 symbol min max min max min max min max units t kc 7.5 8.8 10 15 ns f kf 133 113 100 66 mhz t kh 2.5 2.5 3.0 4.0 ns t kl 2.5 2.5 3.0 4.0 ns t kq 6.8 7.5 8.5 10 ns t oelz 0000 ns t oehz 3.5 4.2 5.0 5.0 ns t as 1.5 1.5 1.8 2.0 ns t adss 1.5 1.5 1.8 2.0 ns
28 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary 100-pin plastic tqfp (jedec lqfp) 14.00 0.10 20.10 0.10 0.62 22.10 +0.10 -0.15 16.00 +0.20 -0.05 pin #1 id 0.65 1.50 0.10 0.25 0.60 0.15 1.40 0.05 0.32 +0.06 -0.10 0.15 +0.03 -0.02 0.10 +0.10 -0.05 detail a detail a 1.00 (typ) gage plane 0.10 note: 1. all dimensions in millimeters max or typical where noted. min 2. package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side.
29 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary 165-pin fbga note: 1. all dimensions in millimeters max or typical where noted. min 10.00 14.00 15.00 0.10 1.00 typ 1.00 typ 5.00 0.05 13.00 0.10 pin a1 id pin a1 id ball a1 mold compound: epoxy novolac substrate: plastic laminate 6.50 0.05 7.00 0.05 7.50 0.05 1.20 max solder ball material: eutectic 63% sn, 37% pb solder ball pad: ? .33mm solder ball diameter refers to post reflow condition. the pre-reflow diameter is ? 0.40 seating plane 0.85 0.075 0.12 c c 165x ? 0.45 ball a11
30 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary 8000 s. federal way, p.o. box 6, boise, id 83707-0006, tel: 208-368-3900 e-mail: prodmktg@micron.com, internet: http://www.micron.com, customer comment line: 800-932-4992 micron is a registered trademark and the micron logo and m logo are trademarks of micron technology, inc. qdr rams and quad data rate rams comprise a new family of products developed by cypress semiconductor, idt, and micron technology, inc. syncburst is a trademark of micron technology, inc. zbt and zero bus turnaround are trademarks of integrated device technology, inc., and the architecture is supported by micron technology, inc., and motorola, inc. 119-pin bga ? 7.62 20.32 19.94 0.10 11.94 0.10 1.27 (typ) 1.27 (typ) 0.60 0.10 2.40 max 0.90 0.10 14.00 0.10 22.00 0.20 a1 corner a1 corner (dimension applies to a noncollapsed solder ball) substrate material: bt resin laminate 0.15 seating plane 0.75 0.15 note: 1. all dimensions in millimeters max or typical where noted. min 2. solder ball land pad is 0.6mm.
31 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram micron technology, inc., reserves the right to change products or specifications without notice. mt58l256l18f1_c.p65 ? rev. 6/01 ?2001, micron technology, inc. 4mb: 256k x 18, 128k x 32/36 flow-through syncburst sram preliminary revision history removed note "not recommended for new designs," rev. 6/01 ................................................................ june 7/01 added industrial temperature note and references, rev. 3/01, final ..................................................... march 6/01 added 119-pin pbga package, rev. 1/01, final ................................................................................. ja nuary 10/01 removed fbga part marking guide, rev 8/00-a, final ..................................................................... august 2 2/00 changed fbga capacitance values, rev 8/00, final .............................................................................. a ugust 7/00 c i ; typ 2.5pf from 4pf; max. 3.5pf from 5pf c o ; typ 4pf from 6pf; max. 5pf from 7pf c ck ; typ 2.5pf from 5pf; max. 3.5pf from 6pf added fbga part marking guide, rev. 7/00, preliminary .......................................................................... july 17/00 added revision history removed industrial temperature references added 165-pin fbga package, rev. 6/00, preliminary ............................................................................. .. may 23/00

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